The Insulator Interface feature is automatically applied to the boundaries at the interface between
Semiconductor Material Model domains and
Charge Conservation (dielectric) domains. A number of options are available to modify the behavior of the boundary.
In combination with the Floating Gate feature, use this option to model both the charging and discharging of a floating gate by Fowler-Nordheim tunneling from the domain.
For Fowler-Nordheim tunneling, select an option from the
Fowler-Nordheim tunneling list —
Electrons (the default),
Holes, or
Electrons and holes. This determines the species for which the tunnel current is computed. Based on this selection, enter:
For User defined, enter an
Electron tunnel current density J
nUD (SI unit: A/m
2). Enter a
Hole tunnel current density J
pUD (SI unit: A/m
2) to define a user defined tunnel current expression.