The Trap-Assisted Surface Recombination boundary condition adds contributions to the surface recombination rate and the surface charge density associated with the surface traps for the following boundary conditions:
Insulation,
Thin Insulator Gate,
Insulator Interface, and
Metal Contact (
Ideal Schottky type only). This feature replaces and expands the functionality of the
Surface traps check box seen in versions prior to 5.4. Both the
Shockley-Read-Hall model and the
Explicit trap distribution options are available. All the settings are the same as its domain condition counterpart
Trap-Assisted Recombination.