Insulator Interface
The Insulator Interface feature is automatically applied to the boundaries at the interface between Semiconductor Material Model domains and Charge Conservation (dielectric) domains. A number of options are available to modify the behavior of the boundary.
The functionality of the Surface traps check box in versions prior to 5.4 has been replaced and expanded by the Trap-Assisted Surface Recombination boundary condition.
Tunneling
Select a Tunneling type — None (the default), Fowler–Nordheim tunneling, or User defined.
Fowler–Nordheim Tunneling
In combination with the Floating Gate feature, use this option to model both the charging and discharging of a floating gate by Fowler–Nordheim tunneling from the domain.
For Fowler–Nordheim tunneling, select an option from the Fowler–Nordheim tunneling list — Electrons (the default), Holes, or Electrons and holes. This determines the species for which the tunnel current is computed. Based on this selection, enter:
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 Electron Fowler–Nordheim coefficients AnFN (SI unit: A/V2) and BnFN (SI unit: V/m).
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 Hole Fowler–Nordheim coefficients ApFN (SI unit: A/V2) and BpFN (SI unit: V/m).
User-Defined Tunneling
For User defined, enter an Electron tunnel current density JnUD (SI unit: A/m2). Enter a Hole tunnel current density JpUD (SI unit: A/m2) to define a user defined tunnel current expression.
Density-Gradient
This section appears only when one of the density-gradient formulation options are selected under the Discretization section. See the identically named section Density-Gradient for details.