The Trap-Assisted Surface Recombination boundary condition adds contributions to the surface recombination rate and the surface charge density associated with the surface traps for the following boundary conditions: Insulation, Thin Insulator Gate, Insulator Interface, and Metal Contact (Ideal Schottky type only). This feature replaces and expands the functionality of the Surface traps check box seen in versions prior to 5.4. Both the Shockley–Read–Hall model and the Explicit trap distribution options are available. All the settings are the same as its domain condition counterpart Trap-Assisted Recombination.