The Trap-Assisted Heterointerface Recombination boundary condition adds contributions to the interface recombination rate and the interface charge density associated with the interface traps for the Continuity/Heterojunction boundary condition (not applicable for the Continuous quasi-Fermi levels option). All the settings are the same as its surface counterpart Trap-Assisted Surface Recombination, except for the Trapping model option, only the Explicit trap distribution option is available, since there is no simple formula like the Shockley–Read–Hall model in the Trap-Assisted Recombination and Trap-Assisted Surface Recombination features, due to the dual contributions to the recombination rates from both sides of the heterojunction.