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Electron mobility reference μn,0ref (SI unit: m2/(V⋅s)). The default value is for silicon (1252 cm2/(V⋅s)).
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Electron mobility minimum reference μn,refmin (SI unit: m2/(V⋅s)). The default value is for silicon (88 cm2/(V⋅s)).
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Electron reference impurity concentration Nn,ref0 (SI unit: 1/m3). The default value is for silicon (1.26e17 1/cm3).
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Hole mobility reference μp,0ref (SI unit: m2/(V⋅s). The default value is for silicon (407 cm2/(V⋅s).
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Hole mobility minimum reference μp,refmin (SI unit: m2/(V⋅s)). The default value is for silicon (54.3 cm2/(V⋅s)).
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Hole reference impurity concentration Np,ref0 (SI unit: 1/m3). The default value is for silicon (2.35e17 1/cm3).
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