The Trap-Assisted Heterointerface Recombination boundary condition adds contributions to the interface recombination rate and the interface charge density associated with the interface traps for the
Continuity/Heterojunction boundary condition (not applicable for the
Continuous quasi-Fermi levels option). All the settings are the same as its surface counterpart
Trap-Assisted Surface Recombination, except for the
Trapping model option, only the
Explicit trap distribution option is available, since there is no simple formula like the
Shockley-Read-Hall model in the
Trap-Assisted Recombination and
Trap-Assisted Surface Recombination features, due to the dual contributions to the recombination rates from both sides of the heterojunction.