Arora Mobility Model (LI)
The Arora Mobility Model (LI) subnode is available from the context menu (right-click the Semiconductor Material Model parent node) or from the Physics toolbar, Attributes menu. Use it to simulate the effect of phonon/lattice and impurity scattering on the electron and hole mobilities in the semiconducting material (the ‘L’ in brackets indicates that the model includes lattice scattering, and the ‘I’ indicates that the model includes impurity scattering). The Arora mobility model is empirical and involves many parameters. The set of equations defining the model is shown in the Equation section.
Domain Selection
Usually the mobility model selection should not be changed from that of the parent Semiconductor Material Model.
General Parameters
For each of the following properties the default takes values From material, or for User defined enter a different value or expression in the text field.
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Reference temperature Tref (SI unit: K). The default is 300 K.
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Alpha coefficient α0 (dimensionless). The default is for silicon 0.88.
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Mobility reference minimum exponent β1 (dimensionless). The default is for silicon −0.57.
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Mobility reference exponent β2 (dimensionless). The default is for silicon −2.33.
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Impurity concentration reference exponent β3 (dimensionless). The default is for silicon 2.4.
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Alpha coefficient exponent β4 (dimensionless). The default is for silicon −0.146.
Electron Parameters
For each of the following properties the default takes values From material, or for User defined enter a different value or expression in the text field.
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Electron mobility reference μn,0ref (SI unit: m2/(V⋅s)). The default value is for silicon (1252 cm2/(V⋅s)).
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Electron mobility minimum reference μn,refmin (SI unit: m2/(V⋅s)). The default value is for silicon (88 cm2/(V⋅s)).
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Electron reference impurity concentration Nn,ref0 (SI unit: 1/m3). The default value is for silicon (1.26e17 1/cm3).
Hole Parameters
For each of the following properties the default takes values From material, or for User defined enter a different value or expression in the text field.
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Hole mobility reference μp,0ref (SI unit: m2/(V⋅s). The default value is for silicon (407 cm2/(V⋅s).
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Hole mobility minimum reference μp,refmin (SI unit: m2/(V⋅s)). The default value is for silicon (54.3 cm2/(V⋅s)).
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Hole reference impurity concentration Np,ref0 (SI unit: 1/m3). The default value is for silicon (2.35e17 1/cm3).
Mobility Models and Theory for the Arora Mobility Model (LI)