The Caughey-Thomas Mobility Model (E) subnode is available from the context menu (right-click the Semiconductor Material Model parent node) or from the Physics toolbar, Attributes menu. It adds a high field correction to an existing mobility model. The ‘E’ in brackets indicates the model includes high field effects only. It accepts input mobilities of type L, I, C, or S as well as user-defined input mobilities. The set of equations defining the Caughey-Thomas mobility model is shown in the Equation section.

These settings are the same as for Fletcher Mobility Model (C).

The Electron input mobility μn,in (SI unit: m2/(V⋅s)) parameter is used to define the input mobility to which high field velocity saturation is added. The default is User defined for silicon at equilibrium, 1448 cm2/(V⋅s).

The Hole input mobility μp,in (SI unit: m2/(V⋅s)) defines the input mobility to which high field velocity saturation is added. The default is User defined for silicon at equilibrium, 473 cm2/(V⋅s).

The default Reference temperature Tref (SI unit: K) is taken From material. For User defined enter a different value in the text field. The default is 300 K.

The default for each of the following is taken From material. For User defined enter a different value in the text field.