The User-Defined Mobility Model subnode is available from the context menu (right-click the Semiconductor Material Model parent node) or from the Physics toolbar, Attributes menu. This can be used to define a mobility model using expressions based on, for example, the temperature and the dopant concentrations.

Enter a value in the Electron input mobility μn,in (SI unit: m2/(V⋅s)) text field. This parameter is used to define an input mobility that can be edited in the Electron mobility text field. The default Electron input mobility is for silicon at equilibrium, that is, 1448 cm2/(V⋅s). Any electron input mobility from other mobility models added to the Semiconductor Material Model can be chosen from the list.

Enter a value in the Hole input mobility μp,in (SI unit: m2/(V⋅s)) text field. This parameter is used to define an input mobility that can be edited in the Hole mobility field. The default Hole input mobility is for silicon at equilibrium, that is, 473 cm2/(V⋅s). Any hole input mobility from other mobility models added to the Semiconductor Material Model can be chosen from the list.

The Electron mobility μ0,n (SI unit: m2/(V⋅s)) field defines the output electron mobility. The default value is taken from Electron input mobility. Any valid mathematical expression can be used to modify the default value.

The Hole mobility μ0,p (SI unit: m2/(V⋅s)) field defines the output hole mobility. The default value is taken from Hole input mobility. Any valid mathematical expression can be used to modify the default value.