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Net generation rate from stimulated processes, reference material, Grefstim (SI unit: 1/(m3·s)). This rate is used when performing the Kramers–Kronig integral to compute the change in the real part of the dielectric constant or refractive index.
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Electron effective mass: Select From band structure properties (the default, defined in the corresponding section), From density of states (converted from Nc, which is defined on the Semiconductor Material Model domain feature), or User defined. For User defined enter the ratio of the effective mass to the electron mass me*/me (dimensionless). The default is 0.053.
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Band gap: Select From band structure properties (defined in the corresponding section), From semiconductor material model (defined in the Semiconductor Material Model node), or User defined. For User defined enter the band gap Eg (SI unit: V). The default is 0.341 V.
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Valence band spin orbital splitting Δ (SI unit: V). The default is 0.341 V.
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The matrix element can be dependent on the excitation angular frequency if desired. Any function of the angular frequency can be used, but the angular frequency should take the form: semi.ot1.omega (for interface tag semi and feature tag ot1).
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Select an Electron effective mass me* — From density of states (the default, which is converted from Nc, defined on the Semiconductor Material Model domain feature), or User defined. For User defined enter the ratio of the electron effective mass to the electron mass me*/me (dimensionless). The default is 0.063.
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Select a Hole effective mass mh* — From density of states (the default, which is converted from Nv, defined on the Semiconductor Material Model domain feature), or User defined. For User defined enter the ratio of the hole effective mass to the electron mass mh*/me (dimensionless). The default is 0.51.
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Select a Band gap Eg — From semiconductor material model (defined in the material properties section of the Semiconductor Material Model domain feature) or User defined. For User defined enter the band gap Eg (SI unit: V). The default is 1.424 V.
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For User-defined frequency, enter the excitation frequency, f0 (SI unit: Hz). The default is 344 GHz.
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