Semiconductors Material Properties

These material property groups for all the material models in semiconductors (including their associated physical properties) can be added to models from the window. These property groups are used by the Semiconductor Module.


	The Property Group, Variable Names, and SI Unit columns are applicable to all materials in the Semiconductor Module. However, the Values and References columns listed in Table 9-12 are specifically for silicon.

Table 9-12: Semiconductor Material Properties (all materials) and Values and REferences for Silicon
Property Group and Property (all MATERIALS)	Name/Variable (all MATERIALS)	SI unit	Value for Silicon	Reference for Silicon
Basic
Relative permittivity	epsilonr	1	11.7	Ref. 1
Thermal conductivity	k	W/(m·K)	131 W/(m·K)	Ref. 1
Density	rho	kg/m3	2329 kg/m3	Ref. 1
Heat capacity at constant pressure	Cp	J/(kg·K)	700 J/(kg·K)	Ref. 1
Band-Gap Narrowing Models>Jain-Roulston Model
Jain-Roulston coefficient (n-type), A	An_jr	V	3.5·10-8 V	Ref. 12
Jain-Roulston coefficient (n-type), B	Bn_jr	V	0 V	Ref. 12
Jain-Roulston coefficient (n-type), C	Cn_jr	V	0 V	Ref. 12
Jain-Roulston coefficient (p-type), A	Ap_jr	V	3.5·10-8 V	Ref. 12
Jain-Roulston coefficient (p-type), B	Bp_jr	V	0 V	Ref. 12
Jain-Roulston coefficient (p-type), C	Cp_jr	V	0 V	Ref. 12
Band-gap narrowing reference concentration	Nref_jr	1/m3	1 1/cm3	Ref. 12
Conduction band fraction	alpha_jr	1	0.5	Ref. 12
Band-Gap Narrowing Models>Slotboom Model
Band-gap narrowing reference energy	Eref_sb	V	0.00692 V	Ref. 11
Band-gap narrowing reference concentration	Nref_sb	1/m3	1.3·1017 1/cm3	Ref. 11
Conduction band fraction	alpha_sb	1	0.5	Ref. 11
Generation-Recombination>Auger Recombination
Auger recombination factor, electrons	Cn	m6/s	2.8·10-31 cm6/s (valid at 300 K)	Ref. 2
Auger recombination factor, holes	Cp	m6/s	9.9·10-32 cm6/s (valid at 300 K)	Ref. 2
Generation-Recombination>Direct Recombination
Direct recombination factor	C	m3/s	0 m3/s	N/A
Generation-Recombination>Impact Ionization
a factor, electrons, impact ionization	an	1/V	0.426 1/V	Ref. 3
a factor, holes, impact ionization	ap	1/V	0.243 1/V	Ref. 3
b factor, electrons, impact ionization	bn	V/m	4.81·105 V/cm	Ref. 3
b factor, holes, impact ionization	bp	V/m	6.53·105 V/cm	Ref. 3
c factor, electrons, impact ionization	cn	1/KValues	3.05·10-4 1/K	Ref. 3
c factor, holes, impact ionization	cp	1/K	5.35·10-4 1/K	Ref. 3
d factor, electrons, impact ionization	dn	1/K	6.86·10-4 1/K	Ref. 3
d factor, holes, impact ionization	dp	1/K	5.67·10-4 1/K	Ref. 3
Generation-Recombination>Shockley-Read-Hall Recombination
Electron lifetime, SRH	taun	s	10 μs	Ref. 4
Hole lifetime, SRH	taup	s	10 μs	Ref. 4
Mobility Models>Arora Mobility Model
Electron mobility reference	mun0_ref_arora	m2/(V·s)	1252 cm2/(V·s)	Ref. 5
Hole mobility reference	mup0_ref_arora	m2/(V·s)	407 cm2/(V·s)	Ref. 5
Electron mobility reference minimum	mun_min_ref_arora	m2/(V·s)	88 cm2/(V·s)	Ref. 5
Hole mobility reference minimum	mup_min_ref_arora	m2/(V·s)	53.4 cm2/(V·s)	Ref. 5
Electron reference impurity concentration	Nn0_ref_arora	1/m3	1.26·10171/cm3	Ref. 5
Hole reference impurity concentration	Np0_ref_arora	1/m3	2.35·10171/cm3	Ref. 5
Alpha coefficient	alpha0_arora	1	0.88	Ref. 5
Mobility reference minimum exponent	beta1_arora	1	-0.57	Ref. 5
Mobility reference exponent	beta2_arora	1	-2.33	Ref. 5
Impurity concentration reference exponent	beta3_arora	1	2.4	Ref. 5
Alpha coefficient exponent	beta4_arora	m2/(V·s)	-0.146	Ref. 5
Reference temperature	Tref_arora	K	300 K	Ref. 5
Mobility Models>Caughey-Thomas Mobility Model
Electron alpha coefficient	alphan0_ct	1	1.11	Ref. 6
Electron alpha exponent	betan1_ct	1	0.66	Ref. 6
Electron saturation velocity	vn0_ct	m/s	1·107 cm/s	Ref. 6
Electron velocity saturation exponent	betan2_ct	1	-0.87	Ref. 6
Hole alpha coefficient	alphap0_ct	1	1.21	Ref. 6
Hole alpha exponent	betap1_ct		0.17	Ref. 6
Hole saturation velocity	vp0_ct	m/s	8.37·106 cm/s	Ref. 6
Hole velocity saturation exponent	betap2_ct	1	-0.52	Ref. 6
Reference temperature	Tref_ct	K	300 K	Ref. 6
Mobility Models>Fletcher Mobility Model
Fletcher mobility coefficient 1	F1_fl	1/(cm·V·s)	1.04×1021 1/(cm·V·s)	Ref. 7
Fletcher mobility coefficient 2	F2_fl	1/m2	7.45×1013 1/cm2	Ref. 7
Reference temperature	Tref_fl	K	300 K	Ref. 7
Mobility Models>Lombardi Surface Mobility Model
Electron delta coefficient	deltan_ls	V/s	5.82 x 1014 V/s	Ref. 8
Electron mobility reference	mun1_ls	m2/(V·s)	4.75 x 107cm2/(V·s)	Ref. 8
Electron mobility reference	mun2_ls	m2/(V·s)	1.74 x 105 cm2/(V·s)	Ref. 8
Electron alpha coefficient	alphan_ls	1	0.125	Ref. 8
Hole delta coefficient	deltap_ls	V/s	2.05 x 1014 V/s	Ref. 8
Hole mobility reference	mup1_ls	m2/(V·s)	9.93 x 107 cm2/(V·s)	Ref. 8
Hole mobility reference	mup2_ls	m2/(V·s)	8.84 x 105 cm2/(V·s)	Ref. 8
Hole alpha coefficient	alphap_ls	1	0.0317	Ref. 8
Reference temperature	Tref_ls	K	1 K	Ref. 8
Electric field reference	Eref_ls	V/m	1 V/cm	Ref. 8
Doping concentration reference	Nref_ls	1/m3	1 1/cm3	Ref. 8
Mobility Models>Power Law Mobility Model
Electron mobility reference	mun0_pl	m2/(V·s)	1448 cm2/(V·s)	Ref. 5
Hole mobility reference	mup0_pl	m2/(V·s)	473 cm2/(V·s)	Ref. 5
Electron exponent	alphan_pl	1	2.33	Ref. 5
Hole exponent	alphap_pl	1	2.23	Ref. 5
Reference temperature	Tref_pl	K	300 K	Ref. 5
Semiconductor Material
Band gap	Eg0	V	1.12 V (valid at 300 K)	Ref. 1
Effective density of states, conduction band	Nc	1/m3	2.8×1019 1/cm3 ×(T/300 K)3/2	Ref. 1
Effective density of states, valence band	Nv	1/m3	1.04×1019 1/cm3 ×(T/300 K)3/2	Ref. 1
Electron affinity	chi0	V	4.05 V	Ref. 1
Electron mobility	mun	m2/(V·s)	1450 cm2/(V·s)	Ref. 1
Hole mobility	mup	m2/(V·s)	500 cm2/(V·s)	Ref. 1