The total electric field, E, can be decomposed into two components:

The known background field becomes a source term and the scattered field formulation thus solves for the relative electric field. A linearly polarized plane wave background field, a paraxial-approximate Gaussian beam, or a user-defined background field can be specified. When solving the scattered field formulation the total, the background, and the relative electric fields are available. The relative field is the difference between the background field and the total field. It is the relative field that contributes to the far-field calculation. For more information about the Far-Field computation, see Far-Field Calculations Theory. The benefit to this approach is that if the background field is much larger in magnitude than the scattered field, the accuracy of the simulation improves if the relative field is solved for. Another advantage is that it becomes very easy to set up a perfectly matched layer surrounding the homogeneous medium modeling domain.

The Escattered component is the scattered field from object. This is the field that is of interest in a scattering problem. However, the relative field may also consist of a component that represents a correction to the background field and a cancellation of the background field. The Ecorrection component can be nonzero when the background field does not exactly satisfy Maxwell’s equations, such as when the paraxial Gaussian beam approximation is used for a tightly focused beam. For more information about the Gaussian beam theory, see Gaussian Beams as Background Fields and Input Fields. The Ecancellation component will be nonzero and equal to −Ebackground wherever the total field should be zero, such as in the interior of any perfectly shielded objects, or behind a relatively large shielding object. Note that this decomposition is conceptual only, it is only the relative field that is available.

An alternative of using the scattered-field formulation, is to use ports with the Activate slit condition on interior port setting enabled. Then the domain can be excited by the interior port and the outgoing field can be absorbed by perfectly matched layers. For more information about the Port feature and the Activate slit condition on interior port setting, see Port Properties.

A default Electric Field, Background plot of the instantaneous background electric field norm is automatically added to any model that uses the scattered–field formulation, except when the Background wave type is set to Linearly polarized plane wave for 2D Axisymmetry. For this case, a default plot is added of a component of the linearly polarized plane wave background field.

Table 2-2 lists the most important variables related to the electric field, defined only for the scattered-field formulation. Table 2-3 describes the intensity and power variables, defined for different background wave types.

The scattered-field formulation is available for The Electromagnetic Waves, Frequency Domain Interface under the Settings section. The scattered field in the analysis is called the relative electric field. The total electric field is always available, and for the scattered-field formulation this is the sum of the scattered field and the incident field.