This example shows how to model a simple Metal–Insulator–Metal (MIM) diode. The two metal electrodes are defined on each side using a Metal Contact feature. Two studies are performed: one without quantum tunneling across the potential barrier and another using the WKB Tunneling Model feature to include it. The resulting I–V characteristics are then compared between two studies: with and without tunneling.

This example shows how to model a simple Shockley diode — a four-layer PNPN semiconductor device. An Analytic Doping Model node is used to define the doping profiles for each domain. A time-dependent study is employed to calculate the I–V characteristics of the diode.

This tutorial demonstrates how to model the band-to-band tunneling across a p–n junction. The tunneling effect is imitated by defining the User-Defined Recombination domain feature, which makes the electrons disappear from the conduction band on the n-side and makes the holes disappear from the valence band on the p-side. The resulting J–V curve under forward bias is derived from the model.