New Models in Version 6.4
Modeling of a Silane/Argon ICP Reactor for Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon
This tutorial model studies the deposition of amorphous silicon using an inductively coupled plasma reactor with a silane/argon gas mixture. It examines how the deposition rate varies across the wafer as a function of silane mole fraction and input power.
Model of a CF4/O2 Inductively Coupled Plasma Reactor with RF Bias for Silicon Etching
This tutorial model studies the etching of silicon using an inductively coupled plasma reactor with an RF bias in a mixture of CF4/O2. The etching rate is computed along the wafer as a function of the RF bias voltage.
Global Model of a CF4/O2 Plasma Reactor for Silicon Etching
In this example, the etching of silicon in a CF4/O2 plasma reactor is studied using a global model. Parametric sweeps for ion energy and oxygen mole fraction are computed.
Model of a CF4/O2 Inductively Coupled Plasma Reactor
This tutorial model simulates an inductively coupled plasma reactor operating with a CF4/O2 gas mixture. The model solves plasma transport, magnetic fields, fluid flow, and heat transfer fully self-consistently.The oxygen mole fraction of the reactor feed is parameterized.
Microwave plasma torch
This tutorial model explores the behavior of a microwave plasma torch. The plasma is generated within a dielectric tube inserted into a rectangular waveguide. The simulation solves a fully self-consistent set of coupled equations, including plasma transport and heating, Maxwell’s equations, fluid flow, and heat transfer.