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ni is the number density of the charge carrier (SI unit: 1/m3)

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E is the electric field (SI unit: V/m)

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zi denotes the carrier charge (SI unit: 1)

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μi denotes the carrier mobility (SI unit: m2/(V·s))

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wi is the drift velocity in the electric field (SI unit: m/s)

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Di is the diffusion coefficient (SI unit: m2/s)

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Ri is the reaction rate (SI unit: 1/(m3·s))

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Ae and Ah are detrapping rate for trapped electrons and trapped holes (SI unit: 1/s)

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Be and Bh are trapping rate for electrons and holes (SI unit: 1/s)

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νte and νth are attempt-to-escape frequency for trapped electrons and trapped holes (SI unit: 1/s)

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φte and φth are detrapping barrier height for trapped electrons and trapped holes (SI unit: V)

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n0,te and n0,th are density of deep traps for electrons and holes (SI unit: 1/m3)

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kB is the Boltzmann constant (SI unit: J/K)

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T is the temperature (SI unit: K)

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C0 is the trapped electron–trapped hole recombination coefficient (SI unit: m3/s)

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C1 is the electron–trapped hole recombination coefficient (SI unit: m3/s)

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C2 is the trapped electron–hole recombination coefficient (SI unit: m3/s)