COMSOL 6.3 - Electric Discharge Material Properties

The following material property groups are used for electric discharge modeling in the Electric Discharge Module.

Table 9-12: Electric Discharge Materials.
Property Group and Property	Name/Variable	SI Unit
Charge transport in Gases (CTG)
Electron mobility	mu_e_iso (3-by-3 matrix)	m2/(V·s)
Positive ion mobility	mu_p_iso (3-by-3 matrix)	m2/(V·s)
Negative ion mobility	mu_n_iso (3-by-3 matrix)	m2/(V·s)
Ionization coefficient	alpha	1/m
Attachment coefficient	eta	1/m
Electron–ion recombination coefficient	beta_ep	m3/s
Ion–Ion recombination coefficient	beta_pn	m3/s
Charge transport in liquids (CTL)
Electron mobility	mu_e_iso (3-by-3 matrix)	m2/(V·s)
Positive ion mobility	mu_p_iso (3-by-3 matrix)	m2/(V·s)
Negative ion mobility	mu_n_iso (3-by-3 matrix)	m2/(V·s)
Electron–ion recombination coefficient	beta_ep	m3/s
Ion–Ion recombination coefficient	beta_pn	m3/s
Attachment time constant	tau_a	s
Number density of ionizable species	n_ioni	1/m3
Molecular separation distance	a	m
Effective electron mass	m_eff	kg
Ionization potential	phi_Delta	V
Parameter	phi_gamma	V
Charge transport in Solids (CTS)
Electron band mobility	mu_be_iso (3-by-3 matrix)	m2/(V·s)
Hole band mobility	mu_bh_iso (3-by-3 matrix)	m2/(V·s)
Depth of shallow traps, electrons	phi_st_e	V
Depth of shallow traps, holes	phi_st_h	V
Attempt-to-escape frequency for trapped electrons	nu_te	1/s
Attempt-to-escape frequency for trapped holes	nu_th	1/s
Detrapping barrier height for trapped electrons	phi_te	V
Detrapping barrier height for trapped holes	phi_th	V
Trapping rate for electrons	B_e	1/s
Trapping rate for holes	B_h	1/s
Number density of deep traps for electrons	n_0_te	1/m3
Number density of deep traps for holes	n_0_th	1/m3
Trapped electron-trapped hole recombination coefficient	C_0	m3/s
Electron-trapped hole recombination coefficient	C_1	m3/s
Trapped electron–hole recombination coefficient	C_2	m3/s
Electron–hole recombination coefficient	C_3	m3/s