Use the Auger Recombination model to set the electron and hole recombination rates at high nonequilibrium carrier densities in semiconducting materials. Select this option from the
Generation–Recombination submenu.
where γn and
γp are the electron and hole degeneracy factors,
Nc,0 and
Nv,0 are the effective densities of states for the conduction and valence band,
Eg is the band-gap (SI unit: V), and
ΔEg the band gap narrowing (SI unit: V). The parameters
Cn and
Cp are material constants (SI unit: m
6/s).
The electron lifetime Auger recombination factor, electrons Cn (SI unit: m
6/s) is taken
From material. For
User defined, enter a value in the text field, the default value is for silicon, 2.8·10
−31 cm
6/s.
The electron lifetime Auger recombination factor, holes Cp (SI unit: m
6/s) is taken
From material. For
User defined, enter a value in the text field, the default value is for silicon, 9.9·10
−32 cm
6/s.
