The Caughey–Thomas Mobility Model (E) subnode is available from the context menu (right-click the Semiconductor Material Model parent node) or from the Physics toolbar, Attributes menu. It adds a high field correction to an existing mobility model. The ‘E’ in brackets indicates the model includes high field effects only. It accepts input mobilities of type L, I, C, or S as well as user-defined input mobilities. The set of equations defining the Caughey–Thomas mobility model is shown in the Equation section.

These settings are the same as for Fletcher Mobility Model (C).

Select the desired driving force formulation from the Driving force Fn,p list:

For User defined, enter the electron and hole driving forces Fn and Fp (SI unit: V/m, default is 0).

The Electron input mobility μn,in (SI unit: m2/(V⋅s)) parameter is used to define the input mobility to which high field velocity saturation is added. The default is User defined for silicon at equilibrium, 1448 cm2/(V⋅s).

The Hole input mobility μp,in (SI unit: m2/(V⋅s)) defines the input mobility to which high field velocity saturation is added. The default is User defined for silicon at equilibrium, 473 cm2/(V⋅s).

The default Reference temperature Tref (SI unit: K) is taken From material. For User defined enter a different value in the text field. The default is 300 K.

The default for each of the following is taken From material. For User defined enter a different value in the text field.