n-Channel MOSFET and p-Channel MOSFET
The n-Channel MOSFET () and the p-Channel MOSFET () device models are large-signal models for, respectively, an n-Channel MOS field-effect transistor (MOSFET) and p-Channel MOSFET. These are advanced device models and no thorough description and motivation of the many input parameters are attempted here. Many device manufacturers provide model parameters for the MOSFET models. For any particular make of MOSFET, the device manufacturer should be the primary source of information.
Node Connections
Specify four Node names for the connection nodes for the n-Channel MOSFET or p-Channel MOSFET device. These represent the drain, gate, source, and bulk nodes, respectively.
Model Parameters
Specify the Model Parameters. Reasonable defaults are provided but for any particular MOSFET, the device manufacturer should be the primary source of information.
The interested reader is referred to Ref. 1 for more details on semiconductor modeling within circuits.
For an explanation of the Model Parameters see MOSFET Transistors.