The NPN BJT (
) and the
PNP BJT (
) device models are large-signal models for bipolar junction transistors (BJT). It is an advanced device model and no thorough description and motivation of the many input parameters are attempted here. Many device manufacturers provide model input parameters for this BJT model. For any particular make of BJT, the device manufacturer should be the primary source of information.
Specify three Node names for the connection nodes for the
BJT device. These represent the
collector,
base, and
emitter nodes for the
NPN transistor, and the
emitter,
base, and
collector nodes for the
PNP transistor.
Specify the Model Parameters. Reasonable defaults are provided but for any particular BJT, the device manufacturer should be the primary source of information.