Domain, Edge, Boundary, Pair, and Point Nodes for the Semiconductor Interface
The Semiconductor Interface has these domain, edge, boundary, pair, and point nodes available from the Physics ribbon toolbar (Windows users), Physics context menu (macOS or Linux users), or by right-clicking the main physics interface node to access the context menu (all users).
In general, to add a node, go to the Physics toolbar, no matter what operating system you are using. Subnodes are available by clicking the parent node and selecting it from the Attributes menu.
In the COMSOL Multiphysics Reference Manual see Table 2-4 for links to common sections and Table 2-5 to common feature nodes. You can also search for information: press F1 to open the Help window or Ctrl+F1 to open the Documentation window.
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The Semiconductor Interface
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Theory for the Semiconductor Interface
These nodes and subnodes are described in this section and listed in alphabetical order:
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Analytic Doping Model
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Analytic Trap Density
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Arora Mobility Model (LI)
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Auger Recombination
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Boundary Selection for Doping Profile
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Boundary Selection for Trap Density Profile
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Caughey-Thomas Mobility Model (E)
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Continuity/Heterojunction
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Continuous Energy Levels (Boundaries)
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Continuous Energy Levels (Domains)
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Continuous Energy Levels (Heterointerfaces)
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Direct Recombination
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Discrete Energy Level (Boundaries)
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Discrete Energy Level (Domains)
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Discrete Energy Level (Heterointerfaces)
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Fletcher Mobility Model (C)
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Floating Gate
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Geometric Doping Model
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Geometric Trap Density
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Impact Ionization Generation
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Indirect Optical Transitions
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Initial Values
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Insulation
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Insulator Interface
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Lombardi Surface Mobility Model (S)
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Metal Contact
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Optical Transitions
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Power Law Mobility Model (L)
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Semiconductor Material Model
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Thin Insulator Gate
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Transition Between Discrete Levels (Boundaries)
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Transition Between Discrete Levels (Domains)
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Transition Between Discrete Levels (Heterointerfaces)
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Trap-Assisted Heterointerface Recombination
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Trap-Assisted Recombination
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Trap-Assisted Surface Recombination
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User-Defined Generation
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User-Defined Mobility Model
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User-Defined Recombination
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WKB Tunneling Model, Electrons
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WKB Tunneling Model, Holes
These nodes and subnodes are described for The Electrostatics Interface:
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Change Cross Section
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Change Thickness (Out-of-Plane)
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Charge Conservation
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Distributed Capacitance
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Electric Displacement Field
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Electric Potential
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External Surface Charge Accumulation
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Floating Potential
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Ground
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Line Charge
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Line Charge (on Axis)
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Line Charge (Out-of-Plane)
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Periodic Condition
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Point Charge
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Point Charge (on Axis)
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Space Charge Density
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Surface Charge Density
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Terminal
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Zero Charge