Use the Floating Gate feature to model a gate contact to a dielectric domain (not a semiconductor domain), which is unconnected to any voltage source, or which is connected to a circuit with a floating potential.

In combination with the Insulator Interface feature that connects the dielectric domain and an adjacent semiconductor domain, the Floating Gate can model both the charging and discharging of a floating gate by tunneling from the semiconductor domain through the dielectric domain.

Add this feature from the boundary level Electrostatics submenu.

Select an External connection — None (the default) or Circuit (to connect the terminal to an electrical circuit).

Select a Tunnel current Itun (SI unit: A) from the list — None, User defined, or choose a tunnel current announced by one of the Insulator Tunneling features in the model. Current injected into the gate accumulates as charge.

Enter a Contact work function Φc (SI unit: V).

Use the Initial charge Qinit (SI unit: C) setting to determine the initial charge on the gate in a transient simulation, or the charge on the gate in a stationary simulation.