Diode
Figure 4-3
illustrates equivalent circuit for the diode.
Figure 4-3:
A circuit for the diode.
The following equations are used to compute the relations between currents and voltages in the circuit.
where the following model parameters are required.
Table 4-3:
Diode Transistor Model Parameters.
Parameter
Default
Description
B
V
Inf (V)
Reverse breakdown voltage
C
J
0
0 F
Zero-bias junction capacitance
F
C
0.5
Forward-bias capacitance coefficient
I
BV
1e-09 A
Current at breakdown voltage
I
KF
Inf (A)
Corner for high-current roll-off
I
S
1e-13 A
Saturation current
M
0.5
Grading coefficient
N
1
Ideality factor
N
BV
1
Breakdown ideality factor
N
R
2
Recombination ideality factor
R
S
0
Ω
Series resistance
T
NOM
298.15 K
Device temperature
V
J
1.0 V
Junction potential
