Thin-Film BAW Composite Resonator

Bulk acoustic wave (BAW) resonators can be used as narrow band filters in radio-frequency applications. Their chief advantage compared with traditional ceramic electromagnetic resonators is that they can be made smaller in size because they can be designed to have an acoustic wavelength smaller than the electromagnetic wavelength.

In addition to the desired bulk acoustic mode, the resonator structure may have many spurious modes with very narrow spacing. The design goal is usually to maximize the quality of the main component and to reduce the effect of spurious modes.

This tutorial shows how you can model thin-film BAW resonators in 2D using eigenfrequency and frequency-response analyses. The geometry used here is the same as that in Ref. 1 and Ref. 2.

Figure 1: Arbitrarily scaled geometry of a thin film BAW resonator.

Model Definition

Figure 1 shows the geometry of the resonator from Ref. 1. The lowest layer of the resonator is silicon. On top of that, there is an aluminum layer that operates as the ground electrode. Above the aluminum layer is the active piezoelectric layer made of zinc oxide (ZnO). The topmost layer of the resonator is an aluminum electrode. The material properties used in this model are obtained from the MEMS Module material library.

A large part of the silicon layer is etched away from the lower end of the central region of the resonator structure. This effectively reduces the thickness of the active central region thereby making the device a thin-film composite BAW resonator.

The thickness of the silicon layer at the central region is 7 μm. Both aluminum layers are 0.2 μm thick, and the piezoelectric layer is 9.5 μm thick. The width of the rectangular top electrode is 500 μm. The thin silicon area is roughly 1.7 mm wide.

Figure 2: The 2D geometry (not drawn to scale) used in the tutorial.

This example is modeled in 2D, using the plane strain assumption where the out-of-plane thickness is specified to be 1.7 mm. The modeled geometry (Figure 2) is a symmetric 1-mm section in the center of the resonator. The Perfectly Matched Layer (PML) domains used on the two sides effectively increase the length of the resonator and simulates the effect of propagation and absorption of elastic waves in the adjoining regions which are not resolved in the true geometric scale.

The absorption of elastic waves in the PML domains contribute to the damping of the structure. This is also known as anchor loss. Additionally, the model also incorporates mechanical and electrical losses in the piezoelectric zinc oxide layer by means of loss factors. A structural loss factor represents the hysteresis in a stress-strain curve and a dielectric loss factor represents the polarization loss, which manifests itself as the hysteresis in the polarization versus electric field curve of the material. The structural and dielectric loss factors appear as the imaginary components of the mechanical stiffness and relative permittivity, respectively.

Ref. 3 gives the material quality Qm and the dielectric loss tangent tan δ for many materials. The magnitude of Qm is roughly 100–1000, and the magnitude of tan δ is roughly 0.001–0.01. Based on that data, the following values are used:

•

Structural loss factor: ηcE = 0.001.

•

Dielectric loss factor: ηεS = 0.01.

In this model, COMSOL Multiphysics solves for both structural and electrical equations in the piezoelectric layer but only solves for the structural equation in the other layers. The electrical equations are not solved in the metallic aluminum layers because the electrical conductivity of aluminum is several orders of magnitude higher than that of zinc oxide and hence the aluminum layers almost act as equipotential regions allowing extremely small conduction current through them. Therefore the electrical characteristics of aluminum do not have any significant effect on the response of the resonator. The dominant electromechanical coupling is exhibited by the piezoelectric layer only.

This tutorial shows two different analyses. In the first step, you compute and investigate the eigenmodes of the structure, with its lateral ends fixed. In the second step, you analyze the frequency response of the resonator within the desired bandwidth of 215 MHz to 235 MHz.

Results and Discussion

Figure 3 shows the lowest BAW mode of the structure which occurs at 221.4 MHz. This plot was generated from the results of the eigenfrequency analysis. This is the fundamental longitudinal thickness mode. The plot shows scaled deformation only to be used for visualization of the mode shape. Note that COMSOL Multiphysics computes complex-valued eigenfrequencies where the imaginary part gives a measure of the damping due to structural loss, polarization loss and anchor loss.

Figure 3: The lowest bulk acoustic mode of the resonator identified from the solutions of the eigenfrequency analysis.

Figure 4: The lowest bulk acoustic mode of the resonator identified from the solutions of the frequency domain analysis.

Figure 4 shows the deformation of the resonator obtained from the frequency response analysis when the zinc oxide layer is excited with 1 volt (zero-to-peak voltage) at 221.5 MHz. The maximum deflection is about 3 nm.

Figure 5: Electric potential distribution in the zinc oxide layer at 235 MHz excitation.

Figure 5 shows the voltage distribution in the piezoelectric layer when excited at 235 MHz.

COMSOL Multiphysics’ Terminal boundary condition which is used to specify the voltage on the piezoelectric material also automatically computes the admittance. The admittance is the ratio of the total current flowing through the piezoelectric material to the voltage across it. It is a complex-valued quantity for a lossy material. Typically the imaginary part reflects the displacement current and the real part reflects the conduction current as well as other losses in the structure. Figure 6 shows the absolute value of admittance as a function of frequency. Within the investigated range of 215 MHz to 235 MHz, the admittance is very similar to that shown in Ref. 2. Note that the highest peak in admittance occurs at the lowest BAW mode of 221 MHz.

Figure 6: Absolute value of the admittance vs. frequency.

Figure 7: Quality factor vs. frequency.

Figure 7 shows the quality factor of the device as a function of frequency. The quality factor or Q-factor indicates the number of cycles (at the given frequency) in which the total energy of the system decreases by a factor of e2π. This is also automatically computed by COMSOL Multiphysics. Figure 7 shows that the maximum value of Q ~ 1300 is obtained at around 221 MHz. This value obtained from the frequency-response analysis agrees well with the Q-factor computed by the eigenfrequency analysis. The results from the eigenfrequency analysis shows the Q-factor at 221.4 MHz to be 1326.

The eigenfrequency analysis also automatically computes the decay factor for each eigenfrequency. The inverse of the decay factor is the time required for the amplitude of a damped signal to reduce to e−1 of its initial amplitude. The decay factor at 221.4 MHz was computed to be 5.25 · 105 s−1.

References

1. R.F. Milsom, J.E., Curran, S.L. Murray, S. Terry-Wood, and M. Redwood, “Effect of Mesa-Shaping on Spurious Modes in ZnO/Si Bulk-Wave Composite Resonators,” Proc. IEEE Ultrason. Symp., pp. 498–503, 1983.

2. T. Makkonen, A. Holappa, J. Ellä, and M.M. Salomaa, “Finite element simulations of thin-film composite BAW resonators,” IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 48, no. 5, 2001.

3. Morgan Advanced Materials, http://www.morganelectroceramics.com

MEMS_Module/Piezoelectric_Devices/thin_film_baw_resonator

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Expression	Unit	Description
abs(es.Y11)	S	Absolute value of admittance