2.
R.G. Chambers, Electrons in Metals and Semiconductors, Chapman and Hall, 1990.
3.
M. Shur, Physics of Semiconductor Devices, Prentice Hall, 1990.
6.
S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer Verlag, 1984.
7.
A.I.M. Rae, Quantum Mechanics, Taylor & Francis, 2007.
20.
C. Canali, G. Majni, R. Minder, and G. Ottaviani, “Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature,” IEEE Transactions on Electron Devices, vol. 22, no. 11, pp. 1045–1047, 1975. Note the correction in: G. Ottaviani, “Correction to ‘Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperatures’,”
IEEE Transactions on Electron Devices, vol. 23, no. 9, p. 1113, 1976.
32.
S.L. Chuang, Physics of Photonic Devices, John Wiley and Sons Inc., 2009.
33.
A. Yariv, Quantum Electronics, John Wiley and Sons, 1989.
35.
A. Yariv, Optical Electronics in Modern Communication, Oxford University Press, 1997.
38.
C.Hermann and C. Weisbuch, “k⋅p perturbation theory in III-IV compounds and alloys: a reexamination,”
Physical Review B, vol. 15 no. 2, pp. 823–833, 1977.
46.
M.G. Ancona, Z. Yu, R. W. Dutton, P.J. Vande Voorde, M. Cao, and D. Vook, “Density-Gradient Analysis of MOS Tunneling,” IEEE Transactions On Electron Devices, vol. 47, no. 12, p. 2310, 2000.