Use the Direct Recombination to set the recombination rate in direct band-gap semiconductor materials such as gallium arsenide. Select this option from the
Generation-Recombination submenu.
where γnand
γp are the electron and hole degeneracy factors,
Nc,0 and
Nv,0 are the effective densities of states for the conduction and valence band,
Eg is the band-gap and
ΔEg the band-gap narrowing (SI unit: V).
The default Direct recombination factor C (SI unit: m
3/s) is taken
From material. For
User defined enter a value in the text field. The default value is 0 m
3/s.