Use the Geometric Trap Density node to specify the density of traps within the domain. This feature enables the trap density to be entered as a function of the distance from selected boundaries. In addition to enabling a fully user-defined trap density to be entered, three preset density profiles are also available. The trap density can be used in conjunction with a
Trap-Assisted Recombination feature to specify recombination via trapping sites whose density varies in space. The available options are similar to the
Geometric Doping Model feature.
Select an Impurity type to give the conductivity type of the selected semiconductor material —
Donor traps (the default),
Acceptor traps,
Neutral electron traps, or
Neutral hole traps.
For Gaussian,
Linear, or
Error function (erf) distribution profiles, enter a
Trap density at boundary Nt0 (SI unit: 1/m
3). The default value is 1·10
16 1/cm
3.
For a User defined profile, enter a value to
Define profile as a function of the distance, D, from the boundaries N(D) (SI unit 1/m
3).
This section is available for Gaussian,
Linear, or
Error function (erf) distribution profiles. Based on the profile selection enter one of the following: