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The carrier temperature is assumed to be equal to the lattice temperature and, consequently, the diffusion of hot carriers is not properly described.
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For nondegenerate semiconductors it is possible to assume a Maxwell-Boltzmann distribution for the carrier energies at a given temperature, which reduces the nonlinearity of the semiconductor equations. If degenerate semiconductors are present within the model, or at lower temperatures, it is necessary to use Fermi-Dirac statistics.
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In majority carrier devices, it is often only necessary to solve for one of the carrier concentrations (the majority carrier). The minority carrier concentration is usually unimportant for the device operation and can be estimated by assuming the mass action law.
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