References for the Semiconductor Interface
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2. R.G. Chambers, Electrons in Metals and Semiconductors, Chapman and Hall, 1990.
3. M. Shur, Physics of Semiconductor Devices, Prentice Hall, 1990.
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42. M. Lenzlinger and E. H. Snow, “Fowler-Nordheim Tunneling into Thermally Grown SiO2”, J. Applied Physics, vol. 40, no. 1, pp. 278–283,1969.
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44. M. A. Green and M. J. Keevers, “Optical Properties of Intrinsic Silicon at 300 K”, Progress in Photovoltaics: Research and Applications, vol 3, 189–192, 1995.